The purpose of UniDIMM is to deal with the transition from DDR3 to DDR4, in which price and availability may require switching RAM types. UniDIMMs have the same dimensions and the number of the pin as regular DDR4 SO-DIMMs, but the notch is located differently to avoid accidental use in an incompatible DDR4 SO-DIMM socket.
Ulsee sdk. Specification for dual in-line memory modules (DIMMs), which are printed circuit boards (PCBs) designed to carry dynamic random-access memory (DRAM) chips.Wikipedia
- DIMMA DIMM or dual in-line memory module comprises a series of dynamic random-access memory integrated circuits. These modules are mounted on a printed circuit board and designed for use in personal computers, workstations and servers.Wikipedia
- Memory modulePrinted circuit board on which memory integrated circuits are mounted. Memory modules permit easy installation and replacement in electronic systems, especially computers such as personal computers, workstations, and servers.Wikipedia
- Dynamic random-access memoryType of random access semiconductor memory that stores each bit of data in a memory cell consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor (MOS) technology. The capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.Wikipedia
- Row hammerUnintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells leak their charges and interact electrically between themselves, possibly leaking or changing the contents of nearby memory rows that were not addressed in the original memory access. This bypass of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times.Wikipedia
- EDRAMDynamic random-access memory (DRAM) integrated on the same die or multi-chip module (MCM) of an application-specific integrated circuit (ASIC) or microprocessor. Higher when compared to equivalent standalone DRAM chips used as external memory, but the performance advantages of placing eDRAM onto the same chip as the processor outweigh the cost disadvantages in many applications.Wikipedia
- SO-DIMMType of computer memory built using integrated circuits. SO-DIMMs are a smaller alternative to a DIMM, being roughly half the size of regular DIMMs.Wikipedia
- Re: Intel UniDIMM initiative for DDR3-DDR4 change Sat Oct 11, 2014 6:47 pm I get the vibe this is more for the big OEMs than it is for enthusiasts that build their own PCs.
- Oct 02, 2015 Your standard DDR4 module is 288 pins where a DDR3 module is 240 pins (for SODIMS it's 260 vs 204). However, there is something called a UniDIMM SO-DIMM which is a form factor that accepts both DDR3 and DDR4.
- NVDIMMType of random-access memory for computers. Memory that retains its contents even when electrical power is removed, for example from an unexpected power loss, system crash, or normal shutdown.Wikipedia
- DDR SDRAMDouble data rate synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM and DDR4 SDRAM.Wikipedia
- Memory rankSet of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).Wikipedia
- Interleaved memoryDesign which compensates for the relatively slow speed of dynamic random-access memory or core memory, by spreading memory addresses evenly across memory banks. That way, contiguous memory reads and writes use each memory bank in turn, resulting in higher memory throughput due to reduced waiting for memory banks to become ready for the operations.Wikipedia
- Memory geometryIn the design of modern computers, memory geometry describes the internal structure of random-access memory. Of concern to consumers upgrading their computers, since older memory controllers may not be compatible with later products.Wikipedia
- SIMMType of memory module containing random-access memory used in computers from the early 1980s to the late 1990s. It differs from a dual in-line memory module (DIMM), the most predominant form of memory module today, in that the contacts on a SIMM are redundant on both sides of the module.Wikipedia
- Serial presence detectStandardized way to automatically access information about a memory module. Earlier 72-pin SIMMs included five pins that provided five bits of parallel presence detect (PPD) data, but the 168-pin DIMM standard changed to a serial presence detect to encode much more information.Wikipedia
- Elpida MemoryCorporation established in 1999 that developed, designed, manufactured and sold dynamic random-access memory (DRAM) products. Also a semiconductor foundry.Wikipedia
- SK HynixSouth Korean memory semiconductor supplier of dynamic random-access memory chips and flash memory chips. World's second-largest memory chipmaker and the world's 3rd-largest semiconductor company.Wikipedia
- Intel 1103Dynamic random-access memory integrated circuit (IC) developed and fabricated by Intel. The first commercially available DRAM IC; and due to its small physical size and low price relative to magnetic-core memory, it replaced the latter in many applications.Wikipedia
- Fully Buffered DIMMMemory technology that can be used to increase reliability and density of memory systems. Conventionally, data lines from the memory controller have to be connected to data lines in every DRAM module, i.e. via multidrop buses.Wikipedia
- PC100Standard for internal removable computer random access memory, defined by the JEDEC. Available in 168-pin DIMM and 144-pin SO-DIMM form factors.Wikipedia
- HyperCloud MemoryDDR3 SDRAM Dual In-Line Memory Module (DIMM) used in server applications requiring a great deal of memory. Initially launched in 2009 at the International Supercomputing Conference by Irvine, California based company, Netlist Inc. It was never a JEDEC standard, and the main server vendors supporting it were IBM and Hewlett Packard Enterprise.Wikipedia
- A-RAMType of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. Invented in 2009 at the University of Granada , in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France.Wikipedia
- Registered memoryNot to be confused with ECC memory, although memory modules often use both technologies. Registered (also called buffered) memory modules have a register between the DRAM modules and the system's memory controller.Wikipedia
- Non-volatile random-access memoryRandom-access memory that is non-volatile. In contrast to dynamic random-access memory and static random-access memory (SRAM), which both maintain data only for as long as power is applied.Wikipedia
- Random-access memoryForm of computer memory that can be read and changed in any order, typically used to store working data and machine code. A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory.Wikipedia
- SIPP memoryShort-lived variant of the 30-pin SIMM random-access memory. It consisted of a small printed circuit board upon which were mounted a number of memory chips.Wikipedia
- GDDR SDRAMType of synchronous dynamic random-access memory (SDRAM) specifically designed for graphics processing units (GPUs). Distinct from the more widely known types of DDR SDRAM, such as DDR3, although they share some of the same features—including double data rate data transfers.Wikipedia
- MonoboardDevice or product that consists of a single printed circuit board . Cost savings.Wikipedia
- Hybrid Memory CubeHigh-performance RAM interface for through-silicon vias (TSV)-based stacked DRAM memory competing with the incompatible rival interface High Bandwidth Memory (HBM). Co-developed by Samsung Electronics and Micron Technology in 2011, and announced by Micron in September 2011.Wikipedia
- T-RAMNew (2009) type of random-access memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. Called thin capacitively-coupled thyristor, is used to create memory cells capable of very high packing densities.Wikipedia
- Multi-channel memory architectureTechnology that increases the data transfer rate between the DRAM memory and the memory controller by adding more channels of communication between them. Theoretically this multiplies the data rate by exactly the number of channels present.Wikipedia
- Memory controllerDigital circuit that manages the flow of data going to and from the computer's main memory. Integral part of a microprocessor; in the latter case, it is usually called an integrated memory controller .Wikipedia
Udimm Dimm
Sentences forUniDIMM
- Accompanying the microarchitecture's support for both memory standards, a new SO-DIMM type capable of carrying either DDR3 or DDR4 memory chips, called UniDIMM, was also announced.Skylake (microarchitecture)-Wikipedia
- For the Skylake microarchitecture, Intel has also designed a SO-DIMM package named UniDIMM, which can use either DDR3 or DDR4 chips.DDR3 SDRAM-Wikipedia
- 260-pin UniDIMMs may contain either DDR3 or DDR4 SDRAM, depending on their configuration.SO-DIMM-Wikipedia
- For its Skylake microarchitecture, Intel designed a SO-DIMM package named UniDIMM, which can be populated with either DDR3 or DDR4 chips.DDR4 SDRAM-Wikipedia
- Some have UniDIMM support, enabling either type of memory to be placed in the same DIMM, rather than having separate DDR3 and DDR4 DIMMs.LGA 1151-Wikipedia
Unidimm Ram
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